NTE2382 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel Enhancement Mode, High Speed Switch (Compl to NTE2383)

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Drain–Source Breakdown Voltage
V_(BR)DSS V_GS = 0, I_D = 0.25mA
100
Zero Gate Voltage Drain Current
I_DSS V_DS = 100V, V_GS = 0
–
V_DS = 80V, V_GS = 0, T_J = +125°C
–
Gate–Body Leakage Current, Forward I_GSS V_GS = 20V
–
Gate–Body Leakage Current, Reverse I_GSS V_GS = 20V
–
Gate Threshold Voltage
V_GS(th) V_DS = V_GS, I_D = 0.25mA
2.0
Static Drain–Source On–Resistance
r_DS(on) V_GS = 10V, I_D = 4.6A, Note 2
–
Forward Transconductance
g_FS V_DS ≥ 50V, I_D = 4.6A, Note 2
2.7
Input Capacitance
C_iss V_DS = 25V, V_GS = 0, f = 1MHz
–
Output Capacitance
C_oss
–
Reverse Transfer Capacitance
C_rss
–
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
t_d(on) V_DD = 50V, I_D = 9.2A, Z_O = 18Ω,
–
t_r
MOSFET switching times are
essentially independent of operating
–
t_d(off) ^temperature
–
Fall Time
t_f
–
Total Gate Charge
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Q_g V_GS = 10V, V_DS = 80V, I_D = 9.2A,
–
Q_gs
Gate charge is essentially
independent of operating
–
Q_gd ^temperature
–
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
I_S
–
(Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
I_SM Note 3
–
V_SD T_J = +25°C, I_S = 9.2A, V_GS = 0V,
–
Note 2
Reverse Recovery Time
t_rr
T_J = +25°C, I_F = 9.2A,
–
dI_F/dt = 100A/µs
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Typ Max Unit
–
–
V
– 0.25 mA
– 1.0 mA
– 100 nA
– –100 nA
– 4.0 V
– 0.27 Ω
4.1 – mhos
400 – pF
130 – pF
40 – pF
8.8 13.0 ns
30 45 ns
19 27 ns
20 30 ns
– 23 nC
4.6 – nC
9.1 – ns
– 9.2 A
– 37 A
– 2.5 V
110 240 ns