NTE2375 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–to–Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain–to–Source On–Resistance
Gate Threshold Voltage
V_(BR)DSS
∆V_(BR)DSS
∆T_J
R_DS(on)
V_GS(th)
V_GS = 0V, I_D = 250µA
Reference to +25°C, I_D = 1mA
V_GS = 10V, I_D = 25A, Note 4
V_DS = V_GS, I_D = 250µA
100 –
–
V
– 0.14 – V/°C
– – 0.055 Ω
2.0 – 4.0 V
Forward Transconductance
Drain–to–Source Leakage Current
Gate–to–Source Forward Leakage
Gate–to–Source Reverse Leakage
g_fs
V_DS = 25V, I_D = 25A, Note 4
13 – – mhos
I_DSS V_DS = 100V, V_GS = 0V
– – 25 µA
V_DS = 80V, V_GS = 0V, T_J = +150°C – – 250 µA
I_GSS V_GS = 20V
– – 100 nA
I_GSS V_GS = –20V
– – –100 nA
Total Gate Charge
Gate–to–Source Charge
Gate–to–Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
I_D = 41A, V_DS = 80V, V_GS = 10V,
Note 4
V_DD = 50V, I_D = 41A, R_G = 6.2Ω,
R_D = 1.2Ω, Note 4
– – 140 nC
– – 29 nC
– – 68 nC
– 16 – ns
– 120 – ns
Turn–Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
t_d(off)
– 60 – ns
t_f
– 81 – ns
L_D
Between lead, .250in. (6.0) mm from – 5.0 – nH
L_S
package and center of die contact
– 13.0 –
nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
– 2800 – pF
– 1100 – pF
– 280 – pF
Source–Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
I_S
I_SM Note 1
V_SD T_J = +25°C, I_S = 41A, V_GS = 0V,
Note 4
– – 41 A
– – 160 A
– – 2.5 V
Reverse Recovery Time
Reverse Recovery Charge
t_rr T_J = +25°C, I_F = 41A,
Q_rr ^{di/dt = 100A/µs, Note 4}
– 220 330 ns
– 1.9 2.9 µC
Forward Turn–On Time
t_on Intrinsic turn–on time is neglegible (turn–on is dominated by L_S+L_D)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.