|
NTE2371 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET P-Ch, Enhancement Mode High Speed Switch | |||
|
◁ |
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainâtoâSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DrainâtoâSource OnâResistance
Gate Threshold Voltage
V(BR)DSS
âV(BR)DSS
âTJ
RDS(on)
VGS(th)
VGS = 0V, ID = 250µA
Reference to +25°C, ID = 1mA
VGS = 10V, ID = 11A, Note 4
VDS = VGS, ID = 250µA
100 â
â
V
â 0.087 â V/°C
â â 0.20 â¦
2.0 â 4.0 V
Forward Transconductance
DrainâtoâSource Leakage Current
GateâtoâSource Forward Leakage
GateâtoâSource Reverse Leakage
gfs
VDS = 50V, ID = 11A, Note4
6.2 â
â mhos
IDSS VDS = 100V, VGS = 0V
â â 100 µA
VDS = 80V, VGS = 0V, TJ = +150°C
â
â 500 µA
IGSS VGS = â20V
â â â100 nA
IGSS VGS = 20V
â â 100 nA
Total Gate Charge
GateâtoâSource Charge
GateâtoâDrain (âMillerâ) Charge
TurnâOn Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
ID = 19A, VDS = 80V, VGS = 10V,
Note 4
VDD = 50V, ID = 19A, RG = 9.1â¦,
RD = 2.4â¦, Note 4
â â 61 nC
â â 14 nC
â â 29 nC
â 16 â ns
â 73 â ns
TurnâOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
â 34 â ns
tf
â 57 â ns
LD
Between lead, .250in. (6.0) mm from â 4.5 â
nH
LS
package and center of die contact
â 7.5
â
nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
â 1400 â pF
â 590 â pF
â 140 â pF
SourceâDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 1
VSD TJ = +25°C, IS = 3.5A, VGS = 0V,
Note 3
â â 19 A
â â 72 A
â â 5.0 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +25°C, IF = 3.5A,
Qrr di/dt = 100A/µs, Note 3
â 130 260 ns
â 0.35 0.70 µC
Forward TurnâOn Time
ton Intrinsic turnâon time is neglegible (turnâon is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ⤠300µs; duty cycle ⤠2%.
|
▷ |