NTE236 Datasheet, PDF(2/2 Page) NTE Electronics – Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

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NTE236 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

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Electrical Characteristics: (TC = +25Â°C unless otherwise specified)

Parameter

Symbol

Test Conditions

EmitterâBase Breakdown Voltage

CollectorâBase Breakdown Voltage

CollectorâEmitter Breakdown Voltage

V(BR)EBO IE = 5mA, IC = 0

V(BR)CBO IC = 1mA, IE = 0

V(BR)CEO IC = 10mA, RBE = â

Collector Cutoff Current

Emitter Cutoff Current

DC Forward Current Gain

Output Power

Collector Efficiency

ICBO

IEBO

hFE

VCB = 30V, IE = 0

VEB = 4V, IC = 0

VCE = 12V, IC = 10mA, Note 1

VCC = 12V, Pin = 1W, f = 27MHz

Note 1. Pulse Test: Pulse Width = 150Âµs, Duty Cycle = 5%.

Min Typ Max Unit

5ââV

60 â â V

25 â â V

â â 100 ÂµA

10 50 180 â

16 18 â W

60 70 â %

.358 (9.1)

.126 (3.2) C

.051 (1.3)

.142 (3.62) Dia

.485

(12.32)

.485

(12.32)

Min

BCE

.395

(9.05)

.189

(4.8)

.100 (2.54)

.177 (4.5)

.019 (0.48)

.347 (9.5)

.122 (3.1)