NTE2359 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Digital w/2 Built-In 47k Bias Resistors

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Input OFF Voltage
Input ON Voltage
Input Resistance
V_CE(sat) I_C = 5mA, I_B = 0.25mA
V_(BR)CBO I_C = 10µA, I_E = 0
V_(BR)CEO I_C = 100µA, R_BE = ∞
V_I(off) V_CE = 5V, I_C = 100µA
V_I(on) V_CE = 200mV, I_C = 5mA
R₁
– 0.1 0.3 V
50 –
–
V
50 –
–
V
0.8 1.1 1.5 V
1.0 2.5 5.0 V
32 47 62 kΩ
Input Resistance Ratio
R₁/R₂
0.9 1.0 1.1
Collector
(Output)
Schematic Diagram
Collector
(Output)
R₁
Base
(Input)
R₂
R₁
Base
(Input)
R₂
Emitter
(GND)
NPN
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
Emitter
(GND)
PNP
ECB
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max