NTE2348 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 1mA, I_E = 0
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 5mA, R_BE = ∞
Emitter–Base Breakdown Voltage V_(BR)EBO I_E = 1mA, I_C = 0
Collector–Emitter Sustaining Voltage V_CEX(sus) I_C = 6A, I_B1 = I_B2 = 1.2mA,
L = 2mH, Clamped
1100 – – V
800 – – V
7––V
800 – – V
Turn–On Time
Storage Time
Fall Time
t_on V_CC = 400V, I_B1 = –2.5A,
t_stg ^{IB2 =IC = 8A, RL = 50Ω}
t_f
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.190 (4.82)
.615 (15.62)
.787
(20.0)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)