NTE2332 Datasheet, PDF (2/2 Pages) NTE Electronics – Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode

Electrical Characteristics (Cont’d): (T_A = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain
Gain Bandwidth Product
Collector–Emitter Saturation
Voltage
h_FE
f_T
V_CE(sat)
V_CE = 5V, I_C = 1A
V_CE = 5V, I_C = 1A
I_C = 1A, I_B = 4mA
1000 4000 –
– 180 – MH_Z
– 1.0 1.5 V
Base–Emitter Saturation
Voltage
V_BE(sat) I_C = 1A, I_B = 4mA
– – 2.0 V
Collector–Base Breakdown V_(BR)CBO I_C = 0.1mA, I_E = 0
Voltage
50 60 70 V
Collector–Emitter Breakdown V_(BR)CEO I_C = 1mA, R_BE = ∞
Voltage
50 60 70 V
Unclamped Inductive Load
Energy
E_s/b L = 100mH, R_BE = 100Ω
25 –
– mJ
Turn–On Time
Storage Time
Fall Time
t_on
V_CC = 20V, I_C = 1A
t_stg
I_B1 = –I_B2 = 4mA
t_f
I_B1 = –I_B2 = 4mA
– 0.2 – µs
– 3.5 – µs
– 0.5 – µs
.420 (10.67)
Max
.110 (2.79)
C
B
.147 (3.75)
Dia Max
.500
(12.7)
Max
E
.070 (1.78) Max
.250
(6.35)
Max
.500
(12.7)
Min
Base
.100 (2.54)
Emitter
Collector/Tab