NTE2318 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch

Electrical Characteristics (Cont’d): (T_C = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(sat)
I_C = 4.5A, V_CE = 5V
I_C = 4.5A, I_B = 2A
I_C = 4.5A, I_B = 2A
2.25 – –
––1V
– – 1.3 V
Current–Gain Bandwidth Product
Output Capacitance
Switching Characteristics
f_T
I_C = 0.1A, V_CE = 5V, f = 1MHz –
7
– MHz
C_ob V_CB = 10V, I_E = 0, f = 0.1MHz – 125 – pF
Storage Time
Fall Time
t_s
I_C = 4.5A, I_B = 1.8A,
t_f
L_B = 10µH
– 8.0 – µs
– 0.5 – µs
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners