NTE2316 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Fast Switching Power Darlington

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Diode Forward Voltage
V_CE(sat)
V_BE(sat)
V_F
I_C = 5A, I_B = 50mA, Note 1
I_C = 7A, I_B = 140mA, Note 1
I_C = 5A, I_B = 50mA, Note 1
I_C = 7A, I_B = 140mA, Note 1
I_F = 7A, Note 1
– – 1.8 V
– – 1.8 V
– – 2.2 V
– – 2.2 V
– – 2.5 V
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
C
B
800Ω
50Ω
E
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners