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NTE2312 Datasheet, PDF (2/3 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
VCEO(sus) IC = 10mA, IB = 0
ICEV VCEV = 700V, VBE(off) = 1.5V
VCEV = 700V, VBE(off) = 1.5V,
TC = +100°C
IEBO VEB = 9V, Ic = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
IC = 2A, VCE = 5V
IC = 5A, VCE = 5V
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 5A, IB = 1A, TC = +100°C
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 5A, IB = 1A, TC = +100°C
Current–Gain Bandwidth Product
fT
Output Capacitance
Cob
Switching Characteristics (Resistive Load)
IC = 500mA, VCE = 10V, f = 1MHz
VCB = –10V, IE = 0, f = 0.1MHz
Delay Time
Rise Time
Storage Time
td
VCC = 125V, IC = 5A,
tr
IB1 = IB2 = 1A, tp = 25µs,
Duty Cycle ≤ 1%
ts
Fall Time
tf
Switching Characteristics (Inductive Load), Clamped
Voltage Storage Time
Crossover Time
tsv
IC = 5A, Vclamp = 300V, IB1 = 1A,
tc
VBE(off) = 5V, TC = +100°C
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
Min Typ Max Unit
400 –
–
–
–
–
–
–
–
V
1 mA
5 mA
1 mA
8
– 60
5
– 30
–
–
1
V
–
–
2
V
–
–
3
V
–
–
3
V
–
– 1.2 V
–
– 1.6 V
–
– 1.5 V
4
–
– MHz
– 110 – pF
– 0.05 0.1 µs
– 0.8 1.5 µs
– 1.0 3.0 µs
– 0.15 0.7 µs
– 0.86 2.3 µs
– 0.14 0.7 µs
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