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NTE2308 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Current Switch
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Sustaining Voltage
Turn–On Time
Storage Time
Fall Time
V(BR)CBO IC = 1mA, IE = 0
V(BR)CBO IC = 10mA, RBE = ∞
V(BR)EBO IE = 1mA, IC = 0
VCEO(sus) IC = 12A, IB = 2.4A, L = 50µH
VCEX(sus) IC = 12A, IB1 = 2.4A, L= 200µH,
IB2 = –2.4A, Clamped
IC = 3A, IB1 = 0.6A, L= 200µH,
IB2 = –0.6A, Clamped
ton
VCC = 200V, IC = 10A, IB1 = 2A,
tstg
IB2 = –2A, RL = 20Ω
tf
500 –
400 –
7
–
400 –
400 –
450 –
–
–
–
–
–
–
–
V
–
V
–
V
–
V
–
V
–
V
1.0 µs
2.5 µs
1.0 µs
.190 (4.82)
.615 (15.62)
.787
(20.0)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)