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NTE2301 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Horizontal Output
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 1)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
VCEO(sus) IC = 50mA, IB = 0
ICES VCE = 1500V, VBE = 0
IEBO VBE = 5V, IC = 0
750 –
–
–
–
–
–
V
1 mA
1 mA
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
VCE(sat)
VBE(sat)
IC = 4.5A, IB = 1.8A
IC = 3.5A, IB = 1.5A
IC = 4.5A, IB = 1.8A
IC = 3.5A, IB = 1.5A
–
–
5
V
–
–
5
V
–
– 1.5 V
–
– 1.5 V
Current Gain – Bandwidth Product
Output Capacitance
Switching Characteristics
fT
IC = 100mA, VCE = 5V, ftest = 1MHz –
4
– MHz
Cob VCB = 10V, IE = 0, f = 0.1MHz
– 125 – pF
Fall Time
tf
IC = 4.5A, IB1 = 1.8A, LB = 8µH
IC = 4.5A, IB1 = 1.8A, LB = 8µH,
TC = +100°C
– 0.4 1.0 µs
– 0.6 – µs
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle = 2%.
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners