NTE228A Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Amp, Video Output

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
h_FE I_C = 1mA, V_CE = 10V
25 –
–
I_C = 30mA, V_CE = 10V
40 – 180
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
V_CE(sat)
V_BE(on)
I_C = 30mA, I_B = 3mA
I_C = 50mA, I_B = 5mA
I_C = 30mA
–
– 0.6 V
–
– 1.5 V
–
– 0.85 V
Dynamic Characteristics
Current Gain–Bandwidth Product
Collector–Base Capacitance
f_T
I_C = 10mA, V_E = 20V, f = 20MHz 45
– 200 MHz
C_cb V_CB = 20V, I_E = 0, f = 1MHz
–
–
3 pF
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.394 (10.0)
C
.492
(12.5)
.335
(8.5)
.165 (4.2) Dia
.335
(8.5)
.197 (5.0)
.059 (1.5) x 45°
Chamf
.119 (3.0)
.138 (3.5)
.532
(13.5)
E BC
.098 (2.5)
.181 (4.6)