NTE218 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon PNP Transistor Audio Power Output

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise sepcified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Transient Characteristics
h_FE
V_CE(sat)
V_BE
V_CE = 1V, I_C = 100mA
V_CE = 1V, I_C = 250mA
V_CE = 1V, I_C = 500mA
V_CE = 1V, I_C = 1A
I_C = 1A, I_B = 125mA
V_CE = 1V, I_C = 250mA
40 –
–
30 – 100
20 –
–
10 –
–
–
– 0.6 V
–
– 1.0 V
Current Gain Bandwidth Product
Common Base Output Capacitance
Small–Signal Current Gain
f_T
V_CE = 1V, I_C = 250mA, f = 1MHz
C_ob V_CE = 10V, I_C = 0, f = 100kHz
h_fe V_CE = 10V, I_C = 50mA, f = 1kHz
3
–
– MHz
–
– 100 pF
25 –
–
Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.360
(9.14)
Min
Base
.200
(5.08)
Collector/Case
Emitter