MMBR951 Datasheet, PDF (2/2 Pages) Motorola, Inc – NPN Silicon Low Noise, High-Frequency Transistors

Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Intrinsic Standoff Ratio
Interbase Resistance
Interbase Resistance
Temperature Coefficient
η
r_BB
αr_BB
V_B2B1 = 10V, Note 3
0.68 – 0.82
V_B2B1 = 3V, I_E = 0
4.7 7.0 9.1 kΩ
V_B2B1 = 3V, I_E = 0, T_A = –55° to +125°C 0.1 – 0.9 %/°C
Emitter Saturation Voltage V_EB1(sat) V_B2B1 = 10V, I_E = 50mA, Note 4
Modulated Interbase Current I_B2(mod) V_B2B1 = 10V, I_E = 50mA
Emitter Reverse Current
I_EB2O V_B2E = 30V, I_B1 = 0
Peak Point Emitter Current
I_P V_B2B1 = 25V
Valley Point Current
I_V V_B2B1 = 20V, R_B2 = 100Ω, Note 4
Base–One Peak Pulse
Voltage
V_OB1
– 3.5 – V
– 15 – mA
– 0.005 0.2 µA
– 1 2 µA
8 10 18 mA
67–V
Note 3. Intrinsic Standoff Ratio, η, is defined by the equation:
η=
V_P – V_F
V_B2B1
Where: V_P = Peak Point Emitter Voltage
V_B2B1 = Interbase Voltage
V_F = Emitter to Base–One Junction Diode Drop ([ 0.45V @ 10µA)
Note 4. Use pulse techniques: PW [ 300µs, Duty Cycle ≤ 2% to avoid internal heating due to inter-
base modulation which may result in erroneous readings.
.210 (5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.030 (.762) Max
Emitter
.018 (0.45)
Base 1
45°
Base 2/Case
.041 (1.05)