NTE998 Datasheet, PDF (1/2 Pages) NTE Electronics – Integrated Circuit 1.22V Reference Diode

NTE998
Integrated Circuit
1.22V Reference Diode
Description:
The NTE998 is a temperature compensated low voltage reference device in a TO92 type package.
A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this
construction is low noise, low current, and good long term stability associated with modern integrated
circuits.
These characteristics make this device ideal for applications in battery operated equipment or where
low power is necessary.
Features:
D Low Breakdown Voltage: 1.220V typ
D Low Bias Current: 50µA
D Temperature Stability: .005 to .01%/°C
Absolute Maximum Ratings:
Power Dissipation (free air) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Lead Temperature (Soldering, 10 sec.) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics:
Parameter
Reverse Breakdown Voltage
Reverse Breakdown Voltage Change
Reverse Dynamic Impedance
Forward Voltage Drop
RMS Noise Voltage
Breakdown Voltage Temperatue Coefficient
Reverse Current
Test Conditions
I_R = 500µA
50µA ≤ I_R ≤ 5mA
I_R = 50µA
I_R = 500µA
I_F = 500µA
I_F = 500µA
50µA ≤ I_R ≤ 5mA
Min Typ Max Unit
1.20 1.22 1.25 V
– 15 20 mV
–
1
2
Ω
–
1
2
Ω
– 0.7 1.0 V
– 0.7 1.0 V
– 0.003 0.01 %/°C
0.05 – 5.0 mA