NTE980 Datasheet, PDF (1/5 Pages) NTE Electronics – Integrated Circuit CMOS, Micropower Phase-Locked Loop (PLL)

NTE980
Integrated Circuit
CMOS, Micropower Phase–Locked Loop (PLL)
Description:
The NTE980 CMOS Micropower Phase–Locked Loop (PLL) consists of a low–power, linear voltage–
controlled oscillator (VCO) and two different phase comparators having a common signal–input am-
plifier and a common comparator input in a 16–Lead type package. A 5.2V zener diode is provided
for supply regulation if necessary.
Features:
D Very Low Power Consumption: 70µW (Typ) @ VCO f_o = 10kHz, V_DD = 5V
D Operating Frequency Range up to 1.4MHz (Typ) @ V_DD = 10V, RI = 5kΩ
D Low Frequency Drift: 0.04%/°C (Typ) @ V_DD = 10V
D Choice of Two Phase Comparators:
Exclusive–OR Network (I)
Edge–Controlled Memory Network ^w/Phase–Pulse Output for Lock Indication (II)
D High VCO Linearity: < 1% (Typ) @ V_DD = 10V
D VCO Inhibit Control for ON–OFF Keying and Ultra–Low Standby Power Consumption
D Source–Follower Output of VCO Control Input (Demod. Output)
D Zener Diode to Assist Supply Regulation
D Standardized, Symmetrical Output Characteristics
D 100% Tested for Quiescent Current at 20V
D 5V, 10V, and 15V Parametric Ratings
Applications:
D FM Demodulator and Modulator
D Frequency Synthesis and Multiplication
D Frequency Discriminator
D Signal Conditioning
D FSK – Modems
D Data Synchronization
D Voltage–to–Frequency Conversion
D Tone Decoding
Absolute Maximum Ratings:
DC Supply Voltage Range (Voltages referenced to V_SS terminal), V_DD . . . . . . . . . . . . –0.5 to +20V
Input Voltage Range, All Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 to V_DD+0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mA
Power Dissipation (T_A = –40° to +60°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
T_A = +60° to +85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Linearly at 12mW/°C to 200mW
Device Dissipation Per Output Transistor (T_A = –40° to +85°C) . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Temperature Range, T_A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec Max), T_L . . . . . . . . . . . +265°C