NTE930 Datasheet, PDF (1/3 Pages) NTE Electronics – Linear Integrated Circuit BiMOS Operational Amp

NTE930
Linear Integrated Circuit
BiMOS Operational Amp
Description:
The NTE930 is an integrated circuit operational amplifier in an 8−Lead Metal Can type package that
combines the advantages of both COS/MOS and bipolar transistors on a monolithic chip.
Gate−protected P−channel MOS/FET (PMOS) transistors are used in the input circuit to provide
very−high−input impedance, very−low−input current and exceptional speed performance. The use
of PMOS field−effect transistors in the input stage results in common−mode input−voltage capability
down to 0.5V below the negative−supply terminal, an important attribute in single−supply applica-
tions.
A complementary−symmetry MOS (COS/MOS) transistor pair, capable of swinging the output volt-
age to within 10mV of either supply−voltage terminal (at very high values of load impedance), is
employed as the output circuit.
The NTE930 operates at supply voltages ranging from 5 to 16 volts, or ±2.5 to ±8 volts when using
split supplies. They can be phase compensated with a single external capacitor, and have terminals
for adjustment of offset voltage for applications requiring offset−null capability. Terminal provision are
also made to permit strobing of the output stage.
Features:
D Wide BW: 15MHz typ (unity−gain crossover)
D High SR: 10V/µs typ (unity−gain follower)
D High Output Current (I_O): 20mA typ
D Compensations with single external capacitor
Applications:
D Ground−Referenced Single−Supply Amplifiers
D Fast Smaple−Hold Amplifiers
D Long−Duration Timers/Monostables
D High−Input−Impedance Comparators (ideal interface with digital COS/MOS)
D High−Input−Impedance Wideband Amplifiers
D Voltage Followers (for single−supply D/A converter)
D Voltage Regulators (permits control of output voltage down to zero volts)
D Peak Detectors
D Single−Supply Full−Wave Precision Rectifiers
D Photo−Diode Sensor Amplifiers