NTE929 Datasheet, PDF (1/2 Pages) NTE Electronics – Integrated Circuit General Purpose, High Current, NPN Transistor Array

NTE929
Integrated Circuit
General Purpose, High Current, NPN Transistor Array
Description:
The NTE929 is a versatile array of five high–current (to 100mA) NPN transistors on a common mono-
lithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e.
1mA) for applications in which offset parameters are of special importance.
Independent connections for each transistors plus a separate terminal for the substrate permit maxi-
mum flexibility in circuit design.
Features:
D High I_C 100mA max
D Low V_CEsat (at 50mA) 0.7V max.
D Matched pair (Q1 and Q2)
V₁₀ (V_BE matched): ±5mV max.
I₁₀ (at 1mA): 2.5µA max.
D 5 independent transistors plus separate substrate connection.
Applications:
D Signal processing and switching systems operating from DC to VHF
D Lamp and relay driver
D Differential amplifier
D Temperature–compensated amplifier
D Thyristor firing
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Power Dissipation, P_D
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Linearly 6.67mW/°C
Operating Ambient Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +125°C
Storage Temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), T_L . . . . . . . . . . . +265°C
The following ratings apply for each transistor in the device:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Substrate Voltage, V_CIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Note 1. The collector of each transistor of the NTE929 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative than any collec-
tor voltage in order to maintain isolation between transistors and provide normal transistor
action. To avoid undesired coupling between transistors, the substrate terminal (Pin5)
should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can
be used to establish a signal ground.