NTE92 Datasheet, PDF(1/2 Page) NTE Electronics – Silicon Complementary Transistors Hi-Fi Power Amp, Audio Ourtput

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

NTE92 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors Hi-Fi Power Amp, Audio Ourtput

NTE92 (NPN) & NTE93 (PNP)

Silicon Complementary Transistors

HiâFi Power Amp, Audio Ourtput

Absolute Maximum Ratings: (TA = +25Â°C unless otherwise specified)

CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A

Collector Power Dissipation (TC = +25Â°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W

Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150Â°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55Â° to +150Â°C

Note 1. Matched complementary pairs are available upon request (NTE93MCP). Matched comple-

mentary pairs have their gain specification (hFE) matched to within 10% of each other.

Electrical Characteristics: (TA = +25Â°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

CollectorâEmitter Breakdown Voltage

DC Current Gain

ICBO VCB = 200V

IEBO VBE = 6V

V(BR)CEO IC = 50mA

hFE VCE = 4V, IC = 5A

CollectorâEmitter Saturation Voltage VCE(sat) IC = 10A, IB = 1A

Transistion Frequency

fT VCE = 12V, IE = 0.5A

Min Typ Max Unit

â â 0.1 mA

200 â â V

30 120 â

â3 âV

â 20 â MHz

▷