NTE912 Datasheet, PDF(1/3 Page) NTE Electronics – Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

NTE912 Datasheet, PDF (1/3 Pages) NTE Electronics – Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)

NTE912

Integrated Circuit

General Purpose Transistor Array

(Three Isolated Transistors and One DifferentiallyâConnected Transistor Pair)

Description:

The NTE912 consists of five generalâpurpose silicon NPN transistors on a common monolithic sub-

strate in a 14âLead DIP type package. Two of the transistors are internally connected to form a differ-

entiallyâconnected pair.

The transistors of the NTE912 are well suited to a wide variety of applications in low power systems

in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How-

ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec-

trical and thermal matching.

Features:

D Two Matched Pairs of Transistors:

VBE matched Â±5mV

Input Offset Current 2ÂµA Max. @ IC = 1mA

D 5 General Purpose Monolithic Transistors

D Operation from DC to 120MHz

D Wide Operating Current Range

D Low Noise Figure: 3.2dB Typ @ 1kHz

Applications:

D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency

Range from DC to VHF

D Custom Designed Differential Amplifiers

D Temperature Compensated Amplifiers

Absolute Maximum Ratings: (TA = +25Â°C unless otherwise specified)

Power Dissipation (TA â¤ +55Â°C), PD

Each Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW

Derate Above 55Â°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/Â°C

Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

Collector Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55Â° to +125Â°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65Â° to +150Â°C

Lead Temperature (During Soldering, 1/16â Â±1/32â from case, 10sec max), TL . . . . . . . . . . . +265Â°C

Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-

strate (Pin13) must be connected to the most negative point in the external circuit to maintain

isolation between transistors and to provide for normal transistor action.

▷