NTE90 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors General Purpose High Gain Amplifier

NTE90 (NPN) & NTE91 (PNP)
Silicon Complementary Transistors
General Purpose High Gain Amplifier
Absolute Maximum Ratings: (T_A = +25°C)
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Collector Output Capacitance
V_(BR)CEO I_C = 1mA, R_BE = ∞
V_(BR)CBO I_C = 10µA, I_E = 0
I_CBO V_CB = 100V, I_B = 0
h_FE1 V_CE = 12V, I_C = 2mA
h_FE2 V_CE = 12V, I_C = 10mA
V_BE V_CE = 12V, I_C = 2mA
V_CE(sat) I_C = 10mA, I_B = 1mA
f_T
V_CE = 12V, I_C = 5mA
C_ob V_CB = 25V, I_E = 0, f = 1MHz
Min Typ Max Unit
120 – – V
120 – – V
– – 0.5 µA
400 – 800
125 – –
– – 0.75 V
– – 0.2 V
– 350 – MHz
– 1.6 – pF