NTE89 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Color TV Horizontal Output w/Internal Damper Diode

NTE89
Silicon NPN Transistor
Color TV Horizontal Output
w_{/Internal Damper Diode}
Features:
D Color TV Horizontal Output Applications
D High Voltage: V_CBO = 1500V
D Low Saturation Voltage: V_CE(sat) = 5V Max (I_C = 5A, I_B = 1A)
D High Speed: t_f = 1.0µs Max
D Built–In Damper Diode
D Glass Passivated Collector–Base Junction
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Emitter Current, I_E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –6A
Collector Power Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter–Base Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Forward Voltage (Damper Diode)
Transition Frequency
Collector Output Capacitance
Fall Time
I_CBO V_CB = 500V, I_E = 0
V_(BR)EBO I_E = 200mA, I_C = 0
h_FE V_CE = 5V, I_C = 1A
V_CE(sat) I_C = 5A, I_B = 1A
V_BE(sat) I_C = 5A, I_B = 1A
–V_F I_F = 6A
f_T V_CE = 10V, I_C = 100mA
C_ob V_CB = 10V, I_E = 0, f = 1MHz
t_f
I_CP = 5A, I_B1(end) = 1A
Min Typ Max Unit
– – 10 µA
5––V
8 12 –
–35V
– – 1.5 V
– 1.6 2.0 V
– 3 – MHz
– 165 – pF
– 0.5 1.0 µs