NTE870 Datasheet, PDF (1/3 Pages) NTE Electronics – Integrated Circuit Dual Operational Transconductance Amp

NTE870
Integrated Circuit
Dual Operational Transconductance Amp
Description:
The NTE870 consists of two current controlled transconductance amplifiers each with differential in-
puts and a push–pull output. The two amplifiers share common supplies but otherwise operate inde-
pendently. Linearizing diodes are provided at the inputs to reduce distortion and allow higher input
levels resulting in a 10dB signal–to–noise improvement referenced to 0.5 percent THD. Controlled
impedance buffers are provided which are especially designed to complement the dynamic range of
the amplifiers.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Supply Voltage, V+/V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V or ±18V
Differential Input Voltage, V_ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
Diode Bias Current, I_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA
Amp Bias Current, I_ABC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA
Buffer Output Current, I_o . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mW
DC Input Voltage, V_IN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V+ to V–
Operating Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to +75°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Electrical Characteristics: (T_A = +25°C, V+/V– = ±15V, I_ABC = 500µA unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Offset Voltage (V_OS)
Input Offset Voltage
V_OS Including Diodes
Input Offset Change
Input Bias Current
V_IO
I_ABC = 5µA
Diode Base Current, I_D = 500µA
5µA ≤ I_ABC ≤ 500µA
I_B
T_A = –20° to +75°C
–
0.4 5.0 mV
–
0.3 5.0 mV
–
0.5 5.0 mV
–
0.1
–
mV
–
0.4 5.0
µA
–
1.0 8.0
µA