NTE85 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor General Purpose Amplifier

NTE85
Silicon NPN Transistor
General Purpose Amplifier
Applications:
D Medium Power Amplifiers
D Class B Audio Outputs
D Hi–Fi Drivers
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
be impaired.
Note 2. These ratings are based on a maximum junction temperature of 150°C.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown
Voltage
V_(BR)CEO I_C = 10mA, I_B = 0, Note 3
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 100µA, I_E = 0
Emitter–Base Breakdown Voltage V_(BR)EBO I_E = 100µA, I_C = 0
Collector Cutoff Voltage
Emitter Cutoff Current
I_CBO
I_EBO
V_CB = 20V, I_E = 0
V_BE = 3V, I_C = 0
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
Min Typ Max Unit
30 – – V
50 – – V
5.0 – – V
–
– 100 nA
–
– 100 nA