NTE78 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output

NTE78
Silicon NPN Transistor
RF Power Output
Description:
The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power
amplifiers in HF band mobile radio applications.
Features:
D High Power Gain
D Emitter Ballasted Construction for High Reliability and Good Performance
Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage (R_BE = 10Ω), V_CER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (T_A = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Collector Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
V_(BR)EBO
V_(BR)CBO
V_(BR)CER
I_E = 1mA, I_C = 0
I_C = 1mA, I_E = 0
I_C = 10mA, R_BE = 10Ω
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
I_CBO
I_EBO
h_FE
V_CB = 30V, I_E = 0
V_EB = 3V, I_C = 0
V_CE = 10V, I_C = 100mA, Note 1
Output Power
P_O V_CC = 12V, P_in = 250mW, f =
27MHz
Collector Efficiency
η_C
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
Min Typ Max Unit
5
–
–
V
75 –
–
V
75 –
–
V
–
– 100 µA
–
– 100 µA
35 70 180
6.0 7.5 – W
55 60 – %