NTE75 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Power Amplifier, Switch (Stud Mount)

NTE75
Silicon NPN Transistor
High Power Amplifier, Switch
(Stud Mount)
Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.
Features:
D Fast Switching: t_r, t_f = 300ns (Max)
D Low Saturation Voltage: 250mV max @ 1A
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
DC Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation, P_D
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
T_C = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.33°C/W
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Cutoff Current
Collector–Base Cutoff Current
Emitter–Base Cutoff Current
V_(BR)CBO I_C = 10µA
V_(BR)CEO I_C = 100mA, Note 1
V_(BR)EBO I_E = 10µA
I_CEO V_CE = 60V
I_CEX V_CE = 110V, V_EB = 500mV
I_CBO V_CB = 80V
I_EBO V_EB = 6V
Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
110 –
–
V
80 –
–
V
8
–
–
V
–
– 100 µA
–
– 10 µA
–
– 0.4 µA
–
– 0.4 µA