NTE71 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Current Amp, Fast Switch

NTE71
Silicon NPN Transistor
High Current Amp, Fast Switch
Description:
The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that
provides surface stabilization for high voltage operation and enhances long term reliability.
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base VOltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (T_C = +25°C unless otherwise spcified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Emitte Cutoff Current
Collector Cutoff Current
ON Characteristics (Note 1)
V_(BR)CEO(sus) I_C = 100mA
I_EBO
V_EB = 10V
I_CEX
V_CE = 150V, V_BE = –1.5V
V_CE = 150V, V_BE = –1.5V,
T_C = +150°C
DC Current Gain
Collector Saturation Voltage
Base–Emitter Voltage
h_FE
V_CE(sat)
V_BE
V_CE = 3V, I_C = 10A
I_C = 10A, I_B = 1.5A
I_C = 10A, I_B = 1.5A
Note 1. Pulse test: Pulse Width = 300µs, Duy Cycle ≤ 2%.
Min Typ Max Unit
150 – – V
– – 250 µA
– – 2 mA
– – 20 mA
10 – 50
– – 1.5 V
– – 2.5 V