NTE703A Datasheet, PDF (1/2 Pages) NTE Electronics – Linear Integrated Circuit RF−IF Amplifier

NTE703A
Linear Integrated Circuit
RF−IF Amplifier
Description:
The NTE703A is an RF−IF amplifier constructed on a single silicon chip and i intended for use as a
limiting or non−limiting amplifier, harmonic mixer, or oscillator to 150MHz. The low internal feedback
of the device insures a higher stability−limited gain than that available from conventional circuitry. In-
cluding the biasing network in the same package reduces the number of external components re-
quired, thereby increasing the reliability and versatility of the device.
Absolute Maximum Ratings:
Supply Voltage, V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Output Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Voltage Between Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5.0V
Internal Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range , T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Lead Temperature (Soldering, 60 seconds), T_L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Note 1. Rating applies for ambient temperature to +70°C.
Electrical Characteristics: (T_A = 25°C, V+ = 12V unless otherwise specified)
Parameter
Test Conditions
Min Typ Max Unit
Supply Current
Power Consumption
Quiescent Output Current
Peak−to−Peak Output Current
Output Saturation Voltage
Forward Transadmittance
Input Conductance
Input Capacitance
Output Capacitance
Output Conductance
Noise Figure
e_in = 0
e_in = 0
e_in = 0
e_in = 400mV_rms, f = 1kHz
I₇ = 2.5mA
e_in = 10mV_rms, f = 1kHz
e_in < 10mV_rms, f = 10.7MHz
e_in < 10mV_rms, f = 10.7MHz
e_o = 100mV_rms, f = 10.7MHz
e_o = 100mV_rms, f = 10.7MHz
f = 10.7MHz, R_S = 500Ω
f = 100MHz, R_S = 500Ω
−
9 14 mA
− 110 170 mW
1.5 2.5 3.3 mA
3.0 −
−
mA
−
− 1.7
V
29 33 − mmho
− 0.35 1.0 mmho
−
9 18 pF
− 2.0 4.0 pF
− 0.03 0.05 mmho
−
6
−
dB
−
8
−