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NTE70 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Power Amp, Switch
NTE70
Silicon NPN Transistor
High Voltage Power Amp, Switch
Description:
The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes
a manufacturing technology that provides surface stabilization for high voltage operation and en-
hances long term reliability.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter Cutoff Current
Collector Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO
IEBO
ICEX
IC = 50mA
VEB = 6V
VCE = Rated VCB, VEB = 1.5V
VCE = Rated VCB, VEB = 1.5V, TC = +150°C
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
VCE = 4V, IC = 20A
IC = 50A, IB = 10A
IC = 20A, IB = 2A
IC = 50A, IB = 10A
Min Typ Max Unit
150 – – V
– – 100 µA
– – 10 µA
– – 1.0 mA
50 – –
– – 3.0 V
– – 1.8 V
– – 3.5 V
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
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