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NTE69 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor UHF/VHF Amplifier
NTE69
Silicon NPN Transistor
UHF/VHF Amplifier
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Operating Junction Temperature Tange, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W
Note 1 RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Colletor–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
ON Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
IC = 1mA, IB = 0, Note 2
IC = 100µA, IE = 0
IE = 100µA, IC = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 4V, IC = 4mA
IC = 10mA, IB = 1mA
IC = 10mA, IB = 1mA
Current Gain–Bandwidth Product
Output Capaciatnce
Collector–Base Time Constant
fT
Cobo
rbCc
VCE = 12V, IC = 4mA, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 12V, IE = 4mA, f = 31.8MHz
Min Typ Max Unit
25 –
–
V
35 –
–
V
3
–
–
V
25 60 –
– 200 350 mV
– 750 950 mV
750 1100 – MHz
– 0.8 1.0 pF
–
– 9.5 ps
Note 2 Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
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