NTE6664 Datasheet, PDF (1/5 Pages) NTE Electronics – Integrated Circuit 64K-Bit Dynamic RAM

NTE6664
Integrated Circuit
64K–Bit Dynamic RAM
Description:
The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536
one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology,
this 5V only dynamic RAM combines high performance with low cost and improved reliability.
By multiplying row– and column– address inputs, the NTE6664 requires only eight address lines and
permits packaging in a standard 16–Lead DIP package. Complete address decoding is done on chip
with address latches incorporated. Data out is controlled by CAS allowing for greater system flexibility.
All inputs and outputs, including clocks, are fully TTL compatible. The NTE6664 incorporates a one–
transistor cell design and dynamic storage techniques. In addition to the RAS–only refresh mode,
the refresh control function available on Pin1 provides two additional modes of refresh, automatic and
self refresh.
Features:
D Single +5V Operation (±10%)
D Maximum Access Time: 150ns
D Low Power Dissipation:
302.5mW Max (Active)
22mW Max (Standby)
D Three State Data Output
D Early–Write Common I/O Capability
D 128 Cycle, 2ms Refresh
D Control on Pin1 for Automatic or Self Refresh
D RAS–Only Refresh Mode
D CAS Controlled Output
D Fast Page Mode Cycle Time
D Low Soft Error Rate: < 0.1% per 1000 Hrs
Absolute Maximum Ratings: (Note 1)
Voltage on V_CC Supply Relative to V_SS, V_CC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –2 to +7V
Voltage Relative to V_SS for Any Pin Except V_CC, V_in, V_out . . . . . . . . . . . . . . . . . . . . . . . . . . . –1 to +7V
Data Out Current (Short Circuit), I_out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Temperature Range, T_A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS.
Exposure to higher than recommended voltages for extended periods of time could affect
the device reliability.