NTE6410 Datasheet, PDF (1/2 Pages) NTE Electronics – Unijunction Transistor (UJT)

NTE6410
Unijunction Transistor (UJT)
Description:
The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and
timing circuits, sensing circuits and thyristor trigger circuits.
Absolute Maximum Ratings: (T_A = +25°C unless other specified)
RMS Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/°C
RMS Emitter Current, I_E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak–Pulse Emitter Current (Note 1), I_E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Emitter Reverse Voltage, V_B2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage (Note 2), V_B2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Duty cycle ≤ 1%, PRR = 10 PPS
Note 2. Based upon power dissipation at T_A = +25°C
Electrical Characteristics: (T_A = +25°C unless other specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Intrinsic Standoff Ratio
η
V_B2B1 = 10V, Note 3
0.70 – 0.85
Interbase Resistance
Interbase Resistance Temperature Coefficient
R_BB
αR_BB
4.0 6.0 9.1 kΩ
0.1 – 0.9 %/°C
Emitter Saturation Voltage
V_BE1(sat) V_B2B1 = 10V, I_E = 50mA, Note 4
– 2.5 –
V
Modulated Interbase Current
Emitter Reverse Current
Peak–Point Emitter Current
Valley–Point Current
I_B2(Mod) V_B2B1 = 10V, I_E = 50mA
– 15 – mA
I_EB2O V_B2E = 30V, I_B1 = 0
– 0.005 1.0 µA
I_P
V_B2B1 = 25V
– 1.0 5.0 µA
I_V V_B2B1 = 20V, R_B2 = 100Ω, Note 4 4.0 7.0 – mA
Base–One Peak Pulse Voltage
V_OB1
5.0 8.0 – V
Note 3. Intrinsic standoff ratio, is defined in terms of peak–point voltage, V_P, by means of the equa-
tion: V_P = η V_B2B1 V_F, where V_F is approximately 0.49 volts at +25°C @ I_F = 10µA and de-
creases with temperature at approximately 2.5mV/°C. Components R₁, C₁, and the UJT
form a relaxation oscillator, the remaining circuitry serves as a peak–voltage detector. The
forward drop of Diode D₁ compensates for V_F. To use, the “call” button is pushed, and R₃
is adjusted to make the current meter, M₁, read full scale. When the “call” button is released,
the value of η is read directly from the meter, if full scale on the meter reads 1.0.
Note 4. Use pulse techniques: PW ∼ 300µs, duty cycle ≤ 2.0% to avoid internal heating, which may
result in erroneous readings.