NTE6403 Datasheet, PDF (1/2 Pages) NTE Electronics – Integrated Circuit Silicon Bilateral Switch (SBS)

NTE6403
Integrated Circuit
Silicon Bilateral Switch (SBS)
Description:
The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of
a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coeffi-
cient and excellently matched characteristics in both directions. A gate lead is provided to eliminate
rate effect and to obtain triggering at lower voltages.
The NTE6403 is specifically designed and characterized for applications where stability of switching
voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is
ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control cir-
cuits.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Peak Recurrent Forward Current (PW = 10µs, Duty Cycle = 1%, T_A = +25°C) . . . . . . . . . . . . . . . 1A
Peak Non–Recurrent Forward Current (PW = 10µs, T_A = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation (Note 1), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA
DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Derate linearly to zero at +125°C.
Note 2. This rating applicable only on OFF state. Maximum gate current in conducting state limited
by maximum power rating.
Electrical Characteristics: (T_A = +25°C, Note 3 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Switching Voltage
Switching Current
Absolute Switching Voltage Difference
Absolute Switching Current Difference
Holding Current
OFF State Current
Temperature Coefficient of Switching Voltage
ON State Forward Voltage Drop
Forward Gate Current to Trigger
V_S
I_S
|V_S2 – V_S1|
|I_S2 – I_S1|
I_H
I_B
V_F = 5V
T_A = +25°C
T_A = +85°C
T_C
T_A = –55° to +85°C
V_F
I_F = 175mA
I_GF
V_F = 5V, R_L = 1kΩ
7.5 – 9.0 V
–
– 120 µA
–
– 200 mV
–
– 10 µA
–
–
.5 mA
–
– 0.1 µA
–
– 10.0 µA
– ±0.05 – %/°C
–
– 1.7 V
–
– 100 µA
Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply
in either direction of current flow.