NTE6401 Datasheet, PDF (1/2 Pages) NTE Electronics – Unijunction Transistor

NTE6401
Unijunction Transistor
Description:
The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 5µA (Max)
D Low Emitter Reverse Current: .005µA (Typ)
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Power Dissipation (Note 1), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
RMS Emitter Current, I_E(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Pulse Emitter Current (Note 2), i_E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage, V_B2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage, V_B2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to 125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1 Derate 3mW/°C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base–Two) must be limited by the external circuitry.
Note 2 Capacitor discharge – 10µF or less, 30 volts or less
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Intrinsic Standoff Ratio
η
V_B2B1 = 10V, Note 3
Interbase Resistance
r_BB V_B2B1 = 3V, I_E = 0
Interbase Resistance Temperature
Coefficient
ar_BB
Min Typ Max Unit
0.56 – 0.75 –
4.7 7.0 9.1 kΩ
0.1 – 0.9 %/°C
Note 3. Intrinsic standoff ratio, η is defined by equation:
η = V_P – V_F
V_B2B1
where
V_P = Peak Point Emitter Voltage
V_B2B1 = Interbase Voltage
V_F = Emitter to Base–One Junction Diode Drop (∼ 0.45V @ 10µA)