NTE64 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor UHF High Speed Switch

NTE64
Silicon NPN Transistor
UHF High Speed Switch
Description:
The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise small–signal amplifiers and applications requiring fast switching times.
Features:
D High Current Gain–Bandwidth Product: f_T = 4.5GHz Typ @ I_C = 15mA
D Low Noise Figure: NF = 2dB Typ @ f = 1GHz
D High Power Gain: G_pe = 10dB Min @ f = 1GHz
D Third Order Intercept: +23dBm Typ
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.375W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V_(BR)CEO I_C = 1mA, I_B = 0
V_(BR)CBO I_C = 0.1mA, I_E = 0
V_(BR)EBO I_E = 0.1mA, I_C = 0
I_CBO V_CB = 15V, I_E = 0
Min Typ Max Unit
15 – – V
25 – – V
2––V
– – 50 nA