NTE631 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Rectifier Diode High−Speed Switch (Surface Mount)

NTE631
Silicon Rectifier Diode
High−Speed Switch
(Surface Mount)
Description:
The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in
a very small rectangular ceramic SMD package.
Features:
D Small Ceramic SMD Package
D High Switching Speed
Applications:
D High−Speed Switching in Surface Mounted Circuits
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V
Continuous Reverse Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Continuous Forward Current (Note 1), I_F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetiive Peak Forward Current, I_FRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5020mA
Non−Repetitive Peak Forward Current (Square Wave, T_J = +25°C Prior to Surge), I_FSM
t = 1µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
t = 1ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
t = 1sec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Total Power Dissipation (T_A = +25°C, Note 1), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Ambient (Note 1), R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 315K/W
Thermal Resistance, Junction−to−Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200K/W
Note 1. Device mounted on an FR4 printed−circuit board.
Electrical Characteristics: (T_J = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Forward Voltage
V_F I_F = 1mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
Min Typ Max Unit
−
− 715 mV
−
− 855 mV
−
− 1.0 V
−
− 1.25 V