NTE63 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Gain, Low Noise Amp

NTE63
Silicon NPN Transistor
High Gain, Low Noise Amp
Description:
The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.
Features:
D High Current Gain–Bandwidth Product: f_T = 5GHz Typ @ f = 1GHz
D High Power Gain: G_pe = 12.5dB Min @ f = 1GHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Total Device Dissipation (T_L = +50°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 50°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Lead, R_thJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V_(BR)CEO I_C = 1mA, I_B = 0
V_(BR)CBO I_C = 0.1mA, I_E = 0
V_(BR)EBO I_E = 0.1mA, I_C = 0
I_CBO V_CB = 15V, I_E = 0
Min Typ Max Unit
12 – – V
20 – – V
2––V
– – 50 nA