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NTE6234 Datasheet, PDF (1/2 Pages) NTE Electronics – Powerblock Module
NTE6234
Powerblock Module
Description:
The NTE6234 uses 2 high voltage power diodes in series and the semiconductors are electrically
isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This
device is intended for general purpose applications such as battery chargers, welders and plating
equipment and where high voltage and high current are required.
Features:
D High Voltage
D Electrically Isolated Base Plate
D 3000VRMS Isolating Voltage
D High Surge Capability
D Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (TC = +100°C, 180° Conduction, Half Sine Wave), IF(AV) . . . . . . . . . 195A
Maximum RMS Forward Current (As AC Switch), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 305A
Maximum Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V
Maximum Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Maximum Peak Reverse Current (TJ = +150°C), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3000V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (Per Module, DC Operation), RthJC . . . . . . . . . . . 0.20°C/W
Thermal Resistance, Case–to–Sink (Per Module, Note 1), RthCS . . . . . . . . . . . . . . . . . . . 0.035°C/W
Note 1. Mounting surface flat, smooth and greased.
Electrical Specifications:
Parameter
Maximum Peak One–Cycle
Non–Repetitive Surge Current
Symbol
IFSM
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Test Conditions
Rating Unit
Sinusoidal Half Wave, 100% VRRM 4000 A
Reapplied, Initial TJ = +150°C
4200 A
Sinusoidal Half Wave, No Voltage 4750 A
Reapplied, Initial TJ = +150°C
4980 A
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