NTE617 Datasheet, PDF (1/2 Pages) NTE Electronics – Varactor Diode

NTE617
Varactor Diode
Description:
The NTE617 is a dual voltage–variable capacitance diode designed for FM tuning, general frequency
control and tuning, or any top–of–the–line application requiring back–to–back diode configurations
for minimum signal distortion and detuning. This device is supplied in the popular TO92 type plastic
package for high volume, economical requirements of consumer and industrial applications.
Features:
D High Figure of Merit: Q = 140 (Typ) @ V_R = 3V, f = 100MHz
D Guaranteed Capacitance Range: 34 – 39pF @ V_R = 3V
D Dual Diodes – Save Space and Reduce Cost
D Monolithic Chip Provides Near Perfect Matching: Guaranteed ±1% (Max) Over Specified
Tuning Range
Absolute Maximum Ratings (Each Device):
Reverse Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Forward Current, I_F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics (Each Device): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
BV_R
I_R
I_R = 10µA
T_A = +25°C
V_R = 30V
32 – –
V
– – 50 nA
Series Inductance
Case Capacitance
Diode Capactance Temperature
Coefficient
T_A = +60°C
– – 500 nA
L_S f = 250MHz, Lead Length [ 1/16” – 6
–
nH
C_C f = 1MHz, Lead Length [ 1/16”
– 0.18 –
pF
TC_C V_R = 4V, f = 1MHz
– 280 400 ppm/°C
Diode Capacitance
Figure of Merit
Capacitance Ratio
C_T V_R = 3V, f = 1MHz
Q V_R = 3V, f = 100MHz, Note 1
C_R C₃/C₃₀, f = 1MHz
34 – 39 pF
100 – 140
2.5 – 2.8
1
Note 1. Q =
2 π f C_T R_S