NTE6093 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Rectifier Dual, Schottky Barrier

NTE6093
Silicon Rectifier
Dual, Schottky Barrier
Description:
The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle
with a Molybenum barrier metal.
Features:
D Low Forward Voltage
D Guard–Ring for Stress Protection
D Low Power Loss & High Efficiency
D Guarantee Reverse Avalanche
D +125°C Operating Junction Temperature
D High Surge Capacity
D Low Storied Charge majority Carrier Conduction
D Low Switching Noise
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Working Peak Reverse Voltage, V_RWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
DC Blocking Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
RMS Reverse Voltage, V_R(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Average Rectifier Forward Current (V_R = 60V, T_C = +125°C), I_F(AV)
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Peak Repetitive Forward Current (V_R = 60V, Square Wave, T_C = +125°C), I_FM . . . . . . . . . . . . . 60A
Non–Repetitive Peak Surge Current, I_FSM
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 600A
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C