NTE6090 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Dual Power Rectifier

NTE6090
Silicon Dual Power Rectifier
Description:
The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the
Schottky Barrier principle with a platinum barrier metal.
Features:
D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
D Guarding for Stress Protection
D Low Forward Voltage
D +150°C Operating Junction Temperature
D Guaranteed Reverse Avalanche
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Working Peak Reverse Voltage, V_RWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
DC Blocking Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Average Rectified Forward Current (V_R = 45V, T_C = +105°C), I_F(AV)
Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak Repetitive Forward Current, Per Diode (V_R = 45V, Square Wave, 20kHz), I_FRM . . . . . . . . 30A
Non–Repetitive Peak Surge Current, I_FSM
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 200A
Peak Repetitive Reverse Current, Per Diode (2µs, 1kHz), I_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Peak Surge Junction Temperature (Forward Current Applied), T_J(pk) . . . . . . . . . . . . . . . . . . . +175°C
Voltage Rate of Change (V_R = 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Electrical Characteristics (Per Diode): (Note 1)
Parameter
Symbol
Test Conditions
Instantaneous Forward Voltage
Instantaneous Reverse Current
v_F i_F = 20A, T_C = +125°C
i_F = 30A, T_C = +125°C
i_F = 30A, T_C = +25°C
i_R V_R = 45V, T_C = +125°C
V_R = 45V, T_C = +25°C
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
– – 0.60 V
– – 0.72 V
– – 0.76 V
– – 100 mA
– – 1 mA