NTE6085 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Dual Schottky Rectifier

NTE6085
Silicon Dual Schottky Rectifier
Description:
The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky
Barrier principle with a platinum barrier metal.
Features:
D Plastic Package
D Metal to Silicon Rectifier, Majority Carrier Conduction
D Low Power Loss, High Efficiency
D High Current Capability, Low V_T
D High Surge Capability
Applications:
D For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection
Absolute Maximum Ratings:
Maximum Recurred Peak Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Working Peak Reverse Voltage, V_RWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.5V
DC Blocking Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Maximum Average Rectified Forward Current (T_C = +105°C), I_F(AV)
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak Forward Surge Current, I_FSM
(8.3ms, Single Half Sine–Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . 150A
Peak Repetitive Reverse Surge Current (2µs, 1kHz), I_FRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Repetitive Reverse Current (2µs, 1kHz), I_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Voltage Rate of Change (V_R = 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/µs
Typical Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3°C/W
Lead Temperature (During Soldering, .250” (6.35mm) from case, 10sec max), T_L . . . . . . . . +250°C
Electrical Characteristics (Per Diode Leg): (Note 1)
Parameter
Symbol
Test Conditions
Instantaneous Forward Voltage
Instantaneous Reverse Current
v_F i_F = 7.5A, T_C = +125°C
i_F = 15A, T_C = +125°C
i_F = 15A, T_C = +125°C
i_R V_R = 45V, T_C = +125°C
V_R = 45V, T_C = +25°C
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
– – 0.57 V
– – 0.72 V
– – 0.84 V
– – 15 mA
– – 0.1 mA