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| NTE601_13 Datasheet, PDF (1/1 Pages) NTE Electronics – Silicon Varistor Temperature Compensating Diode | |||
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NTE601
Silicon Varistor
Temperature Compensating Diode
Features:
D High reliability planar chip and glass sealing
D Low IR
D Large PD
Absolute Maximum Ratings: (TA = +25ï°C unless otherwise specified)
Maximum Forward Current, IFM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ï°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55ï° to +150ï°C
Electrical Characteristics: (TA = +25ï°C unless otherwise specified)
Parameter
Symbol Test Conditions
Reverse Current
IR
VR = 6V
Forward Voltage
VF
IF = 1.5mA
Forward Voltage Change with Respect to Temperature
IF = 50mA
âïVF/ïT IF = 1.5mA
Min Typ Max Unit
â â 10 ïA
0.59 â 0.64 V
â â 1.1 V
â 2.0 â mV/ï°C
.099 (2.51) Max
.022 (0.56) Max
.099 (2.51) Max
.080 (2.03)
Dia Max
.500 (12.7)
Min
.118
(3.0)
Max
.500 (12.7)
Min
Color Band Denotes Cathode
Rev. 5â13
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