NTE601 Datasheet, PDF (1/1 Pages) NTE Electronics – Silicon Varistor Temperature Compensating Diode

NTE601
Silicon Varistor
Temperature Compensating Diode
Features:
D High reliability planar chip and glass sealing
D Low I_R
D Large P_D
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Maximum Forward Current, I_FM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Reverse Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions
Reverse Current
Forward Voltage
Forward Voltage Change with Respect to Temperature
I_R
V_F
–∆V_F/∆T
V_R = 6V
I_F = 1.5mA
I_F = 50mA
I_F = 1.5mA
Min Typ Max Unit
– – 10 µA
0.59 – 0.64 V
– – 1.1 V
– 2.0 – mV/°C
.099 (2.51) Max
.022 (0.56) Max
.099 (2.51) Max
.080 (2.03)
Dia Max
.500 (12.7)
Min
.118
(3.0)
Max
.500 (12.7)
Min
Color Band Denotes Cathode