NTE592 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Diode, General Purpose, High Voltage

NTE592
Silicon Diode, General Purpose, High Voltage
Description:
The NTE592 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This
device is intended for switching and general purposes applications.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Repetitive Peak Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Non–Repetitive Peak Forward Current (t = 1s), I_FSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), I_F(Av) . . . . . . 200mA
DC Forward Current (T_A ≤ +25°C, Note 2), I_F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Repetitive Peak Forward Current, I_FRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mA
Total Power Dissipation (T_A ≤ +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 2), R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Thermal Resistance, Tab–to–Soldering Points, R_thTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W
Thermal Resistance, Soldering Points–to–Ambient, R_thSA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90K/W
Note 1. Measured under pulse conditions: Pulse Time = t_p ≤ 0.3ms.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Forward Voltage
Reverse Breakdown Voltage
Reverse Current
Differential Resistance
Diode Capacitance
Reverse Recovery Time
(When switched from
I_F = 30mA to I_R = 30mA
V_F I_F = 100mA
–
– 1.00 V
I_F = 200mA
–
– 1.25 V
V_(BR)R I_R = 100µA, Note 1 & 3 250 –
–V
I_R V_R = 200V
–
– 100 nA
V_R = 200V, T_J = +150°C –
– 100 µA
r_diff I_F = 10mA
–
5
–Ω
C_d V_R = 0, f = 1MHz
–
–
5 pF
t_rr measured at I_R = 3mA,
–
R_L = 100Ω
–
50 ns
Note 1. Measured under pulse conditions: Pulse Time = t_p ≤ 0.3ms.
Note 3. At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V.