NTE584 Datasheet, PDF (1/1 Pages) NTE Electronics – Silicon Schottky Diode

NTE584
Silicon Schottky Diode
Description:
The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown,
low turn–on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and
pulse application with broad dynamic range.
Absolute Maximum Ratings: (Limiting Values)
Repetitive Peak Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Forward Continuous Current (T_A = +25°C, Note 1), I_F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35mA
Surge Non–Repetitive Forward Current (t_p ≤ 1s, Note 1), I_FSM . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Maximum Lead Temperature (During Soldering, 10s at 4mm from Case), T_L . . . . . . . . . . . . +230°C
Thermal Resistance, Junction–to–Ambient (Note 1), R_ΘJA . . . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W
Note 1. On infinite heat sink with 4mm lead length.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristic
Breakdown Voltage
Forward Voltage
Continuous Reverse Current
Dynamic Characteristic
V_(BR)
V_F
I_R
I_R = 10µA
I_F = 1mA, Note 2
I_F = 35mA, Note 2
V_R = 15V, Note 2
Overvoltage Coefficient
Minority Carrier Life Time
C V_R = 0V, f = 1MHz
τ I_F = 5mA, Krakauer Method
Note 2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle < 2%.
Min Typ Max Unit
20 – – V
– – 0.41 V
– – 1.0 V
– – 0.1 µA
– – 1.2 pF
– – 100 ps
1.000 (25.4)
Min
.200 (5.08)
Max
.022 (.509) Dia Max
Color Band Denotes Cathode
.090 (2.28)
Dia Max