NTE578 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Rectifier Schottky Barrier, General Purpose

NTE578
Silicon Rectifier
Schottky Barrier, General Purpose
Description:
The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide
passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–fre-
quency inverters, free wheeling diodes, and polarity protection diodes.
Features:
D Low Reverse Current
D Low Stored Charge, Majority Carrier Conduction
D Low Power Loss/High Efficiency
D Highly Stable Oxide Passivated Junction
D Guard–Ring for Stress Protection
D Low Forward Voltage
D 150°C Operating Junction Temperature
D High Surge Capacity
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Working Peak Reverse Voltage, V_RWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
DC Blocking Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Average Rectified Forward Current, I_O
(V_R (equiv) ≤ 0.2V_R(dc), R_θJA = 50°C/W, P.C. Board Mounting, T_A = +120°C) . . . . . . . . . 1A
Nonrepetitive Peak Surge Current, I_FSM
(Surge applied at rated load conditions, half–wave single phase, 60Hz) . . . . . . . . . . . . . 25A
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Voltage Rate of Change (Rated V_R), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Electrical Characteristics: (T_L = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions
Min Typ Max Unit
Maximum Instanteous Forward Voltage
Maximum Instanteous Reverse Current
V_F I_F = 1A, Note 1
–
I_R V_R = 90V, T_L = +25°C
–
V_R = 90V, T_L = +100°C –
– 0.6 V
– 0.5 mA
– 5.0 mA
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.