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| NTE570 Datasheet, PDF (1/1 Pages) NTE Electronics – Silicon Controlled Avalanche Diode | |||
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NTE570
Silicon Controlled Avalanche Diode
Absolute Maximum Ratings:
Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V
Allowable Avalanche Current (Square Wave Single Pulse 100µs), IZSM . . . . . . . . . . . . . . . . . . . 1.0A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â40° to +150°C
Storage temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â40° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Avalanche Voltage
Reverse Current
Reverse Current (High Temperature)
Temperature Dependency of VZ
VZ
IR
IR(H)
J
IZ = 1mA Instantaneous
VR = 130V
VR = 130V, TA = +100°C
IZ = 1mA
Min Typ Max Unit
135 â 180 V
â â 10 µA
â â 50 µA
â 0.15 â V/°C
1.070
(27.2)
Min
.291
(7.4)
Max
.032 (0.83) Dia Max
.165 (4.2)
Dia Max
Color Band Denotes Cathode
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