NTE5650 Datasheet, PDF (1/2 Pages) NTE Electronics – TRIAC - 100VRM, 2.5A

NTE5650 thru NTE5653
TRIAC – 100V_RM, 2.5A
Description:
The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and
MOS devices. These devices features a void–free glass passivated chip and are hermetically sealed
in TO–5 outline cans.
The NTE5650 through NTE5653 are bi–directional triode thyristors and may be switched from off–
state to conduction for either polarity of applied voltage with positive or negative gate–trigger current
and are designed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (T_J = +90°C, Gate Open, Note 1), V_DROM
NTE5650 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5651 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5652 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5653 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (T_C = +75°C and Conduction Angle of 360°), I_T(RMS) . . . . . . . . . . . . . . . 3A
Peak Surge (Non–Repetitive) On–State Current (One–Cycleat 50Hz or 60Hz), I_TSM . . . . . . . . 30A
Peak Gate–Trigger Current (3µsec, Max.), I_GTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (I_GT ≤ I_GTM for 3µsec. Max.), P_GM . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, P_G(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W
Operating Temperature Range (T_C), T_opr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +90°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W
Note 1. All values apply in either direction.
Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
I_DROM T_J = +90°C, V_DROM = Max Rating,
Gate Open, Note 1
– – 0.75 mA
Maximum On–State Voltage
DC Holding Current
Critical Rate–of–Rise of Off–State
Voltage
V_TM T_C = +25°C, i_T = 5A (Peak), Note 1
–
I_HO T_C = +25°C, Gate Open
–
Critical T_C = +90°C, v_D = V_DROM, Gate Open, –
dv/dt Note 1
– 1.85 V
– 5 mA
3 – V/µs
DC Gate–Trigger Current
MT₂ (+) Gate (+), MT₂ (–) Gate (–) I_GT T_C = + 25°C, v_D = 6V, R_L = 39Ω
MT₂ (+) Gate (–), MT₂ (–) Gate (+)
– – 3 mA
Note 1. All values apply in either direction.